Furthermore, the peak positions

in the Ф scans of ZnO 1010 (2θ = 31.77°, χ = 30°) and STO 112 (2θ = 57.79°, χ = 35.26°) coincide, implying that their zone axes are parallel to each other, that is, <0001>ZnO∥<110>STO, as shown in Figure 2c. In addition, the lattice mismatches are −5.7% ( ), 1.9% ( ) and −1.8% ( ) along the directions of <0001>ZnO, <1100>ZnO, and <1101>ZnO in the film plane, respectively. Figure 2 ZnO films on as-received and etched (001) STO substrates. X-ray θ-2θ (a) and Ф (b) scanning patterns and atomic arrangements (c, d). Similarly, the in-plane orientation relationships for (0001) ZnO films on etched (001) STO can also be achieved from selleck chemical X-ray Ф scanning. Figure 2b displays 12

peaks separated by 30° for the ZnO 1011 family, which has six planes intersecting the surface at 61.6°. It indicates that two domains with 30° rotation coexist. Comparing the peak positions of the ZnO 1011 (2θ = 36.26°, Temsirolimus solubility dmso χ = 61.61°) and STO 112 (2θ = 57.79°, χ = 35.26°), the in-plane orientation relationship is demonstrated to be <1120>ZnO//<110>STO for (0001) ZnO on etched (001) STO substrates, and the atomic arrangements are shown in Figure 2d. The lattice Selleck ZIETDFMK mismatch in the direction of <1100>ZnO is 1.9% ( ), whereas in the direction of <1120>ZnO, a higher order matching with a mismatch of −1.9% can also be found for seven ZnO over six STO unit cells. The higher order matching has been proposed

for the epitaxial growth in large lattice mismatch system [18], but the lower order matching is regarded as the leading growth mechanism. Although the lattice mismatch of the (1120) and (0001) ZnO with (001) STO are almost the same along <1100>ZnO, (0001)-oriented films are obtained on etched (001) STO. This result is considered to be related to the fact that ZnO films tend to be oriented in the (0001) direction even on amorphous substrates [19], implying that the restriction of substrates decreases and the surface energy becomes dominant for the growth of ZnO films on etched (001) STO. As a result, the (0001) plane having the lowest surface energy, the close-packing plane tends to be oriented on etched (001) STO substrates. Figure 3a shows that ZnO films exhibit SPTBN5 (0002) and (1012) preferred orientations on as-received and etched (011) STO substrates. The angle between (1012) and (0002) is calculated to be 42.77°, which corresponds to the tilted angle of the trench in etched (011) STO (41.8°, as shown in Figure 1d). This phenomenon is similar to that of GaN on patterned (001) Si substrates [20]. The ZnO films on as-received (011) STO show similar X-ray θ-2θ and Ф scanning patterns with other reports [6, 7], and the atomic arrangements are shown in Figure 3c. The in-plane orientation relationship obtained was <1100>ZnO∥<011>STO by comparing the Ф scanning peak positions of ZnO 1011 (2θ = 36.26°, χ = 61.