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“Background Resistive random access memory (RRAM) is one of the emerging non-volatile memory technologies. It is composed of a thin insulator layer sandwiched between two metals (MIM) that have competitive advantages of greater writing and reading speed, smaller size, and low programming voltage over phase-change RAM [1], magnetoresistive RAM [2], flash memory [3], and ferroelectric RAM [4]. Resistive switching (RS) with different switching behaviors, including bipolar, unipolar,

and threshold switching, have been reported in various n-type metal Sorafenib cost this website oxides (e.g., perovskite oxides [5, 6] and transition metal oxides [7–11]). As to the resistive switching mechanism,

compared with n-type oxides where oxygen vacancies play a crucial role in the switching process, understanding the resistive switching conduction nature of p-type oxides such as cobalt oxides and nickel oxides, which exhibit excellent memory characteristics [12], is rather scarce. This is due to the lack of direct experimental evidence to verify the resistive switching conduction characteristics. Two-dimensional nanosheets are considered to be excellent candidates for future nanoelectronic applications [13, 14]. Such nanostructures and their electronic states play an important role in realizing the innovative electronic, optical, and magnetic functionalities. For example, the operation of almost all semiconducting devices relies on the application of two-dimensional interfaces. To date, various nanosheets have attracted increasingly fundamental research interest because of their potential to be used for different applications like electrochemical capacitors [15, 16] and super capacitors [17–19]. However, the resistive switching properties in p-type oxide nanosheets have remained much less explored. In this work, we developed a facile approach to fabricate high-quality p-type Co3O4 nanosheets with excellent resistive switching properties. Morphology-controlled Ag nanostructures were also synthesized electrochemically by Liang et al. [20].