32. Lulli G, Merli PG, Rizzoli R, Berti M, Drigo AV: Anomalous distribution of As during implantation in silicon under self-annealing conditions. J Appl Phys 1989, 66:2940. 10.1063/1.344174CrossRef Competing interests The authors declare that they have no competing interest. Authors’ contributions HW designed the experiments and wrote the manuscript. HZ supervised the whole work. Both authors read and approved the final manuscript.”
“Background

Combretastatin A4 ic50 Low-dimensional III-nitrides materials have gained much research attention because of their strong carrier confinement which may lead to the realization of next-generation electronic and optoelectronic applications [1–5]. Among these low-dimensional III-nitride materials, the study of single GaN quantum dot has become the recent focus due to its Akt inhibitor promising applications in the solid-state

quantum computation, single-photon sources, and single-photon detectors, in which the density of quantum dots is required to be as low as approximately 108 cm-2 [6–9]. However, challenges remains in fabrication of low-density GaN quantum dots (QDs) with high quality. On the one hand, the most frequently used fabrication approach is self-assembly process via Stranski-Krastanov (SK) growth mode which requires sufficient lattice mismatch, but it is harder to acquire low-density GaN QDs 17-AAG solubility dmso and usually results in randomly distributed QDs with different sizes [10, 11]. On the other hand, although some low-density GaN nanodots can be obtained by the droplet epitaxy technique based on a vapor-liquid-solid process which offers distinct advantages in size and density manipulation of QDs, the droplet epitaxy technique usually results in QDs with the incomplete transition from Ga droplet to crystal GaN. What is more, there is almost no report about fabrication of low-density GaN QDs via the droplet epitaxy technique [12, 13]. Motivated by the above issues, recently, we have demonstrated the fabrication of GaN nanodots on AlN templates via GaN thermal decomposition in H2 atmosphere, which does not involve the induction

of strain or the crystallization of the Ga droplets [14]. In addition, the recent studies and applications of GaN-based materials growth have been demonstrated [15–20]. In this letter, the thermal decomposition conditions are further optimized and low-density GaN/AlN QDs with high quality are achieved. This study Ergoloid provides an alternative approach to fabricating low-density GaN QDs for single-photon devices. Methods GaN QDs were formed on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD). Triethylgallium (TEGa), trimethylaluminum (TMAl), and ammonia were used as precursors for Ga, Al, and N sources with H2 as carrier gas. The total pressure was maintained at 40 Torr. The sapphire substrates were introduced into the MOCVD reactor and 800-nm-thick AlN buffer layers were deposited. Then, 800-nm-thick GaN epilayers were grown on the AlN templates at 940°C.